By Elie Maricau
This e-book specializes in modeling, simulation and research of analog circuit getting older. First, all very important nanometer CMOS actual results leading to circuit unreliability are reviewed. Then, transistor getting older compact types for circuit simulation are mentioned and several other equipment for effective circuit reliability simulation are defined and in comparison. eventually, the impression of transistor getting older on analog circuits is studied. Aging-resilient and aging-immune circuits are pointed out and the impression of expertise scaling is mentioned.
The types and simulation strategies defined within the booklet are meant as an relief for equipment engineers, circuit designers and the EDA group to appreciate and to mitigate the effect of getting older results on nanometer CMOS ICs.
Read or Download Analog IC Reliability in Nanometer CMOS PDF
Best nanotechnology books
Semiconductor and steel Nanocrystals addresses themes impacting the sphere together with synthesis and meeting of nanocrystals, thought and spectroscopy of interband and intraband optical transitions, single-nanocrystal optical and tunneling spectroscopies, electric shipping in nanocrystal assemblies, and actual and engineering features of nanocrystal-based units.
This novel ebook is the 1st entire textual content on Dynamical Mean-Field thought (DMFT), which has emerged over the last twenty years as some of the most robust new advancements in many-body physics. Written through one of many key researchers within the box, the amount develops the formalism of many-body Green's features utilizing the equation of movement strategy, which calls for an undergraduate strong nation physics direction and a graduate quantum mechanics path as must haves.
The booklet provides idea, basics and a few functions of ferroelectricy. The 24 chapters contain experiences and examine studies overlaying the spectrum of ferroelectricity. it's meant to explain the present degrees of figuring out of assorted points of ferroelectricity as provided via gurus within the box.
This quantity of development in Molecular Biology and Translational technology introduces rising suggestions of learning RNA constitution and serve as utilizing nanotechnological instruments. the quantity goals to supply the readers with a unique view and provides them possibilities to contemplate the way to contain the recent applied sciences into their very own learn.
- Dekker Encyclopedia of Nanoscience and Nanotechnology
- Nanoscale: Issues and Perspectives for the Nano Century
- BioMEMS and Biomedical Nanotechnology
- Superlattice to nanoelectronics
Extra info for Analog IC Reliability in Nanometer CMOS
A DC Model The model is developed based on the reaction-diffusion (RD) approach proposed by Kufluoglu and Ashraful Alam (2004) and is also based on the LEM. As will be discussed in Sect. 2, the RD model has a number of drawbacks and is therefore not well suited to develop a BTI compact model. One of these drawbacks is the absence of support for oxide trapping in the RD model. Oxide trapping, however, is related to the typical BTI recovery effect upon stress removal. Nevertheless, the RD model can still be used to model the hot carrier effect since traps are only generated near the drain end of the transistor and therefore recovery effect is negligible.
1985). Later, when supply voltages were scaled down and graded drain junctions were introduced, HCI became a less dominant reliability problem. e. >90 nm) (Moens et al. 2010). g. inductor-based oscillators or power amplifiers) (Chouard et al. 2010; Sagong et al. 2011). Therefore, it is still important to correctly estimate the impact of HCI on the behavior of a circuit. This requires an accurate HCI compact model. HCI mainly occurs in nMOS transistors and causes a shift of important transistor parameters such as the threshold voltage and the carrier mobility.
Under the influence of the field generated by the substrate’s bulk bias, the first carriers are accelerated and potentially generate secondary carriers. These secondary carriers also accelerate in the bulk bias field towards the surface region where they further gain kinetic energy to overcome the surface energy barrier (see Fig. 6d). SGHE is observed as a rather small effect with limited contribution to the transistor degradation. As explained above, each of the four hot carrier mechanisms occurs at different transistor operating conditions.
Analog IC Reliability in Nanometer CMOS by Elie Maricau