Analysis and Design of Analog Integrated Circuits - download pdf or read online

By Meyer, Hurst, Gray, Lewis

ISBN-10: 0470245999

ISBN-13: 9780470245996

The 5th version keeps its completeness, updates the assurance of bipolar applied sciences, and complements the dialogue of bicmos. It presents a extra unified therapy of electronic and analog circuit layout whereas strengthening the insurance of cmos. The bankruptcy on non-linear analog circuits has been got rid of and bankruptcy eleven has been up to date to incorporate an operational amplifier instance. versions for integrated-circuit lively units bipolar, mos, and bicmos integrated-circuit know-how single-transistor and multiple-transistor amplifiers present mirrors, lively quite a bit, and references output levels operational amplifiers with single-ended outputs frequency reaction of built-in circuits suggestions frequency reaction and balance of suggestions amplifiers nonlinear analog circuits noise in built-in circuits totally differential operational amplifiers

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26 Typical enhancement-mode NMOS structure. 5 Large-Signal Behavior of Metal-Oxide-Semiconductor Field-Effect Transistors 39 a conductive gate material (metal or polycrystalline silicon) covers the oxide between source and drain. Note that the gate is horizontal in Fig. 26, and we will use this orientation in all descriptions of the physical operation of MOS devices. In operation, the gate-source voltage modifies the conductance of the region under the gate, allowing the gate voltage to control the current flowing between source and drain.

81) this causes a decrease in the breakdown voltage and the characteristic bends back as shown in Fig. 12 and exhibits a negative slope. At higher collector currents, βF approaches a constant value and the breakdown curve with IB = 0 becomes perpendicular to the VCE axis. The value of VCE in this region of the curve is usually defined to be BVCEO , since this is the maximum voltage the device can sustain. 81) is thus the peak value of βF . 81) that high-β transistors will thus have low values of BVCEO .

So in systems where analog techniques are used on some integrated circuits and digital techniques on others, bipolar technologies are often preferred for the analog integrated circuits and MOS technologies for the digital. To reduce system cost and increase portability, both increased levels of integration and reduced power dissipation are required, forcing the associated analog circuits to use MOS-compatible technologies. One way to achieve these goals is to use a processing technology that provides both bipolar and MOS transistors, allowing great design flexibility.

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Analysis and Design of Analog Integrated Circuits by Meyer, Hurst, Gray, Lewis


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